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auirlr024z AUIRLU024Z hexfet ? power mosfet www.irf.com 1 pd - 97753 automotive grade features logic level advanced process technology ultra low on-resistance 175c operating temperature fast switching repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * description specifically designed for automotive applications, this hexfet ? power mosfet utilizes the latest processing techniques to achieve extremely low on- resistance per silicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive ava- lanche rating . these features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. s d g parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj e as (tested ) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds (1.6mm from case ) thermal resistance parameter typ. max. units r ? jc junction-to-case ??? 4.28 r ? ja junction-to-ambient (pcb mount) ??? 40 c/w r ? ja junction-to-ambient ??? 110 -55 to + 175 300 35 0.23 16 25 25 see fig.12a, 12b, 15, 16 max. 16 11 64 gds gate drain source d-pak auirlru024z i-pak AUIRLU024Z v (br)dss 55v r ds(on) typ. 46m ? max. 58m ?

2 www.irf.com s d g s d g
repetitive rating; pulse width limited by max. junction temperature. (see fig. 11).
limited by t jmax , starting t j = 25c, l = 0.54mh r g = 25 ? , i as = 9.6a, v gs =10v. part not recommended for use above this value. pulse width ? 1.0ms; duty cycle ? 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. this value determined from sample failure population, starting t j = 25c, l = 0.54mh, r g = 25 ? , i as = 9.6a, v gs =10v. when mounted on 1" square pcb (fr-4 or g-10 material) . for recommended footprint and soldering techniques refer to application note #an-994. r ?? is measured at
static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 55 ??? ??? v ? ? ? a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 200 na gate-to-source reverse leakage ??? ??? -200 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge ??? 6.6 9.9 q gs gate-to-source charge ??? 1.6 ??? nc q gd gate-to-drain ("miller") charge ??? 3.9 ??? t d(on) turn-on delay time ??? 8.2 ??? t r rise time ??? 43 ??? t d(off) turn-off delay time ??? 19 ??? ns t f fall time ??? 16 ??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 380 ??? c oss output capacitance ??? 62 ??? c rss reverse transfer capacitance ??? 39 ??? pf c oss output capacitance ??? 180 ??? c oss output capacitance ??? 50 ??? c oss eff. effective output capacitance ??? 81 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 16 (body diode) a i sm pulsed source current ??? ??? 64 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 16 24 ns q rr reverse recovery charge ??? 11 17 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) conditions v gs = 5.0v, i d = 5.0a v gs = 4.5v, i d = 3.0a v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 0v, v ds = 44v, ? = 1.0mhz v ds = 25v, i d = 9.6a i d = 5.0a v ds = 44v v gs = 16v v gs = -16v v gs = 5.0v i d = 5.0a r g = 28 ? showing the integral reverse p-n junction diode. conditions v gs = 5.0v v gs = 0v di/dt = 100a/ s conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 9.6a v ds = v gs , i d = 250 a v ds = 55v, v gs = 0v v ds = 55v, v gs = 0v, t j = 125c mosfet symbol v dd = 28v v ds = 25v ? = 1.0mhz v gs = 0v, v ds = 0v to 44v t j = 25c, i f = 9.6a, v dd = 28v

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( ) )*) qualification information ? d-pak msl1 i-pak msl1 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (+/- 1125v) ??? aec-q101-005 moisture sensitivity level rohs compliant yes esd machine model class m1b (+/- 100v) ??? aec-q101-002 human body model class h0 (+/- 250v) ??? aec-q101-001

4 www.irf.com fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. typical forward transconductance vs. drain current 0.1 1 10 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 3.0v ? 60 s pulse width tj = 175c vgs top 10v 9.0v 7.0v 5.0v 4.5v 4.0v 3.5v bottom 3.0v 0.1 1 10 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 9.0v 7.0v 5.0v 4.5v 4.0v 3.5v bottom 3.0v ? 60 s pulse width tj = 25c 3.0v 0 2 4 6 8 10 12 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ? ? ) t j = 25c t j = 175c v ds = 10v ? 60 s pulse width 0 2 4 6 8 10 12 14 16 i d ,drain-to-source current (a) 0 5 10 15 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 8.0v 300 s pulse width

www.irf.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v sd , source-to-drain voltage (v) 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 1msec 10msec operation in this area limited by r ds (on) 100 sec tc = 25c tj = 175c single pulse 01234567 q g total gate charge (nc) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 44v v ds = 28v v ds = 11v i d = 5.0a nce

6 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. normalized on-resistance vs. temperature 25 50 75 100 125 150 175 t c , case temperature (c) 0 2 4 6 8 10 12 14 16 i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse durati on (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes : 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ?? i (sec) 2.354 0.000354 1.926 0.001779 ? j ? j ? 1 ? 1 ? 2 ? 2 r 1 r 1 r 2 r 2 ? ? c ci i ? ri ci= ? i ? ri -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 5.0a v gs = 5.0v

www.irf.com 7 q g q gs q gd v g charge %&+ fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 14. threshold voltage vs. temperature r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 1k vcc dut 0 l 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 1.2a 1.8a bottom 9.6a -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250 a

8 www.irf.com fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming ? tj = 25c due to avalanche losses 0.01 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 5 10 15 20 25 30 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = 9.6a

www.irf.com 9 fig 17. ,-.
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p.w. period di/dt diode recovery dv/dt ripple ? 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period 0

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d-pak part marking information

.# 121 3323-3- "2"*456 ,7 5) 5#

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i-pak part marking information

.# 121 3323-3- "2"* ,7 5) 5#

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tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch

www.irf.com 13 ordering information base part number package type standard pack complete part number form quantity auirlr024z dpak tube 75 auirlr024z tape and reel 2000 auirlr024ztr tape and reel left 3000 auirlr024ztrl tape and reel right 3000 auirlr024ztrr AUIRLU024Z ipak tube 75 AUIRLU024Z

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